NTTFS008N04CTAG The ON Semiconductor NTTFS008N04CTAG is an N-Channel Power MOSFET designed for efficient power management. It features a 40V drain-source voltage and low on-resistance.
Mfr Part #:

NTTFS008N04CTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTTFS008N04CTAG is an N-Channel Power MOSFET designed for efficient power management. It features a 40V drain-source voltage and low on-resistance.
✓ Total Stock: 13,500 pcs
$ Price Range: $0.99

NTTFS008N04CTAG Available from 1 distributor

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✓ Non-Authorised
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NTTFS008N04CTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS008N04CTAG Description

Short technical summary and product information.

The ON Semiconductor NTTFS008N04CTAG is a single N-Channel Power MOSFET designed for compact and efficient applications. It offers a drain-to-source voltage of 40V and a low on-resistance of 8.5mOhm at 15A and 10V gate drive, minimizing conduction losses.

 

This MOSFET supports a continuous drain current of up to 48A when the case temperature is 25°C, and 14A when the ambient temperature is 25°C. It operates within a wide temperature range of -55°C to 175°C (TJ).

 

The device is housed in an 8-PowerWDFN package with a 3.3x3.3mm footprint, suitable for surface mounting. Its features include low input capacitance and gate charge, contributing to minimized driver losses. The NTTFS008N04CTAG is designed for applications requiring efficient power switching and management.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 3.5V at 30µA. The maximum power dissipation is 3.1W at ambient temperature and 38W at case temperature, both at 25°C.

NTTFS008N04CTAG Quick Information

Product Type: MOSFET
Canonical Name: NTTFS008N04CTAG N-Channel Power MOSFET
Subcategory: N-Channel

NTTFS008N04CTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS008N04CTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS008N04CTAG Features

  • 40V drain-to-source voltage rating.
  • Low 8.5mOhm on-resistance.
  • High 48A continuous drain current.
  • Compact 8-WDFN surface mount package.
  • Wide -55°C to 175°C operating temperature.

NTTFS008N04CTAG Applications

  • Efficient power switching applications.
  • Compact power management designs.
  • Low conduction loss requirements.
  • High current density circuits.

NTTFS008N04CTAG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTTFS008N04CTAG?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-resistance of the NTTFS008N04CTAG?

The maximum on-resistance is 8.5mOhm at 15A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 48A when measured at the case temperature of 25°C, and 14A when measured at the ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What type of package does the NTTFS008N04CTAG use?

It uses an 8-PowerWDFN package, specifically a 3.3x3.3mm footprint, designed for surface mounting.

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