| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS002N04CTAG is a single N-Channel MOSFET from On Semiconductor, designed for power applications. It features a drain-to-source voltage (Vdss) of 40V and a low on-resistance (Rds(on)) of 2.4mOhm at 50A and 10V gate drive.
This MOSFET can handle a continuous drain current of up to 136A at case temperature and 27A at ambient temperature. Its power dissipation is rated at 85W at case temperature and 3.2W at ambient temperature. The device operates within a wide temperature range of -55°C to +175°C.
Packaged in an 8-PowerWDFN (3.3x3.3mm) surface-mount package, the NTTFS002N04CTAG is suitable for compact designs. It offers low conduction and driver losses due to its low Rds(on) and low capacitance. The device is Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum on-resistance (Rds On) is 2.4mOhm when tested at 50A and 10V gate-to-source voltage.
The continuous drain current (Id) is 136A at a case temperature of 25°C.
The operating junction and storage temperature range is from -55°C to +175°C.
It is supplied in an 8-PowerWDFN package.
Yes, the device is RoHS3 Compliant.