NTTFD9D0N06HLTWG The NTTFD9D0N06HLTWG is a Dual N-Channel MOSFET from On Semiconductor. It features a 60V drain-source voltage and a low on-resistance of 9mOhm at 10A, 10V.
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NTTFD9D0N06HLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTTFD9D0N06HLTWG is a Dual N-Channel MOSFET from On Semiconductor. It features a 60V drain-source voltage and a low on-resistance of 9mOhm at 10A, 10V.
✓ Total Stock: 7,298 pcs
$ Price Range: $0.99

NTTFD9D0N06HLTWG Available from 1 distributor

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NTTFD9D0N06HLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTTFD9D0N06HLTWG Description

Short technical summary and product information.

The NTTFD9D0N06HLTWG is a dual N-channel MOSFET designed for optimal power efficiency in synchronous buck converters. It offers a drain-source voltage of 60V and a maximum continuous drain current of 38A at case temperature.

 

Key electrical characteristics include a low Rds(on) of 9mOhm at 10A and 10V gate-source voltage, and 13mOhm at 8.0A and 4.5V. The device also features a gate charge of 13.5nC and an input capacitance of 948pF.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a 12-PowerWQFN surface mount package, measuring 3.3x3.3mm. The low inductance packaging contributes to reduced switching losses.

 

Typical applications include computing, communications, and general-purpose point-of-load power management.

NTTFD9D0N06HLTWG Quick Information

Product Type: Dual MOSFET
Canonical Name: Dual N-Channel MOSFET
Subcategory: Dual MOSFET

NTTFD9D0N06HLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFD9D0N06HLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFD9D0N06HLTWG Features

  • Dual N-Channel MOSFET configuration.
  • 60V drain-source voltage rating.
  • Low 9mOhm Rds(on) at 10A, 10V.
  • Surface mount 12-WQFN package.
  • Wide -55°C to 150°C operating temperature.

NTTFD9D0N06HLTWG Applications

  • Suitable for computing applications.
  • Used in communication systems.
  • Ideal for point-of-load converters.
  • Designed for synchronous buck converters.

NTTFD9D0N06HLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTTFD9D0N06HLTWG?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 38A at TC = 25°C and 9A at TA = 25°C.

What is the on-state resistance (Rds(on))?

The Rds(on) is a maximum of 9mOhm at 10A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NTTFD9D0N06HLTWG supplied in?

It is supplied in a 12-PowerWQFN surface mount package.

Is the NTTFD9D0N06HLTWG RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The MSL is 1 Unlimited.

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