| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,340,247 pcs
|
2340247 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Maximum @ Vgs = 10 V) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Maximum @ Vds=15 V) | |
| Lead Spacing | |
| Mounting Type | |
| On Resistance (Maximum @ Id = 10 A, Vgs = 10 V) | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy (EAS) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTTFD4D1N03P1E is a dual N-channel MOSFET designed for power applications. It features advanced MOSFET technology with optimized figure-of-merit, offering low junction capacitance for high switching frequency applications and reduced shoot-through.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V. The on-resistance (Rds(on)) is as low as 4.3mOhm at 10A and 10V for one channel and 3.5mOhm at 10A and 10V for the other. Continuous drain current (Id) is rated at 54A under case temperature conditions (Tc=25°C) and 15A under ambient temperature conditions (Ta=25°C). Power dissipation is 20W (Tc=25°C) and 1.7W (Ta=25°C).
This MOSFET is housed in a compact 12-WQFN package with a 3.3x3.3mm footprint, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). Typical applications include DC-DC converters and system voltage rails.
The device is Pb-free and RoHS compliant, with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTTFD4D1N03P1E is 30V.
The maximum continuous drain current (Id) at a case temperature of 25°C is 54A.
The on-resistance (Rds On) is a maximum of 4.3mOhm at 10A and 10V for one channel, and 3.5mOhm at 10A and 10V for the other channel.
The operating junction and storage temperature range is -55°C to 150°C.
The NTTFD4D1N03P1E is supplied in a 12-PowerWQFN package, specifically a 12-WQFN (3.3x3.3) size.
Yes, the NTTFD4D1N03P1E is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.