| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,001 pcs
|
75001 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTTFD2D8N03P1E is a N-channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage of 30V and is designed for switching applications requiring high efficiency. The device is housed in a 12-WQFN package suitable for surface mounting on printed circuit boards. Its electrical characteristics include a maximum continuous drain current of 80A at 25°C, a Rds On maximum of 2.5mOhm at 18A and 10V, and input capacitance of up to 1521pF at 15V. The device operates over a temperature range from -55°C to 150°C, making it suitable for various industrial and consumer applications. Its low gate charge and threshold voltage of 3V facilitate efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
It comes in a 12-WQFN package.
-55°C to 150°C.