| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,600 pcs
|
14600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTTFD022N10C from On Semiconductor is a dual N-channel MOSFET designed for efficient power management. This device features a breakdown voltage of 100V and a low on-resistance of 25mOhm at a gate-source voltage of 10V and a drain current of 7.8A. It can handle a continuous drain current of 24A at 25°C case temperature or 6A at 25°C ambient temperature.
Designed with low inductance packaging to reduce switching losses, the NTTFD022N10C is suitable for applications requiring optimal power efficiency. Its operating temperature range is -55°C to 150°C (TJ). The MOSFET is housed in a 12-PowerWQFN package and is surface-mountable.
Key electrical characteristics include an input capacitance of 585pF at 50V and a gate charge of 9nC at 10V. The gate-source threshold voltage is 4V at 44µA. This component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (TJ)
12-PowerWQFN
RoHS3 Compliant
24 A at 25°C case temperature, 6 A at 25°C ambient temperature
25 mOhm at 7.8A, 10V
585pF at 50V
9nC at 10V