| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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168,000 pcs
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168000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This dual N-channel MOSFET from On Semiconductor, part number NTTFD018N08LC, is designed for applications requiring efficient power management. It operates with a drain-to-source voltage of up to 80V and offers a maximum on-resistance of 18 mOhm at 7.8A and 10V gate-source voltage.
The device is configured as two N-channel MOSFETs within a single package, internally connecting the switch node for simplified synchronous buck converter designs. It features low inductance packaging which contributes to shorter rise and fall times, resulting in reduced switching losses.
Packaged in a 12-PowerWQFN (3.3x3.3mm) format, the NTTFD018N08LC is designed for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance of 856pF at 40V and a gate charge of 12.4nC at 10V. The gate threshold voltage is a maximum of 2.5V at 44µA.
Typical applications include 48V input primary half bridge converters, communications systems, and general-purpose point-of-load power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
The maximum on-resistance is 18 mOhm at 7.8A and 10V.
The continuous drain current rating is 26A at Tc=25°C.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a 12-PowerWQFN package.
It is a surface mount device.