NTS4101PT1G The NTS4101PT1G is a P-Channel MOSFET from On Semiconductor. It features a -20V drain-to-source voltage and a continuous drain current of 1.37A.
Mfr Part #:

NTS4101PT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTS4101PT1G is a P-Channel MOSFET from On Semiconductor. It features a -20V drain-to-source voltage and a continuous drain current of 1.37A.
✓ Total Stock: 63,615 pcs
$ Price Range: $0.99

NTS4101PT1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

NTS4101PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTS4101PT1G Description

Short technical summary and product information.

The NTS4101PT1G is a P-Channel MOSFET designed for various applications by On Semiconductor. It offers a drain-to-source voltage of -20V and a continuous drain current of -1.37A at 25°C.

 

Key electrical characteristics include a maximum gate threshold voltage of -1.5V at 250µA and an Rds(on) as low as 83mOhm at 1A and 4.5V. The device operates within a junction temperature range of -55°C to 150°C.

 

This MOSFET is housed in a compact SC-70, SOT-323 package, making it suitable for applications where space is limited. Its surface mount design facilitates integration into printed circuit boards.

 

Applications for the NTS4101PT1G include high-side load switching, charging circuits, and single-cell battery applications found in devices like cell phones and digital cameras.

NTS4101PT1G Quick Information

Product Type: MOSFET
Canonical Name: NTS4101PT1G P-Channel MOSFET
Subcategory: P-Channel

NTS4101PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTS4101PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTS4101PT1G Features

  • P-Channel MOSFET technology
  • -20V drain-to-source voltage
  • 1.37A continuous drain current
  • Low Rds(on) characteristics
  • Compact SC-70 package

NTS4101PT1G Applications

  • High side load switch applications
  • Charging circuit designs
  • Single cell battery applications
  • Cell phones and digital cameras

NTS4101PT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the NTS4101PT1G?

The drain-to-source breakdown voltage is -20V.

What is the maximum gate-to-source voltage for this MOSFET?

The maximum gate-to-source voltage is ±8V.

What is the continuous drain current at 25°C?

The maximum continuous drain current is 1.37A.

What package does the NTS4101PT1G come in?

It comes in a SC-70, SOT-323 package.

What is the operating temperature range of this device?

-55°C to 150°C.

Is the NTS4101PT1G RoHS compliant?

Yes, it is RoHS3 compliant.

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