NTS4001NT1G The ON Semiconductor NTS4001NT1G is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and a continuous drain current of 270mA.
Mfr Part #:

NTS4001NT1G

Available from 11 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTS4001NT1G is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and a continuous drain current of 270mA.
✓ Total Stock: 1,074,922 pcs
$ Price Range: $0.99

NTS4001NT1G Available from 11 distributors

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NTS4001NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTS4001NT1G Description

Short technical summary and product information.

The ON Semiconductor NTS4001NT1G is a single N-Channel MOSFET designed for surface mount applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 270mA at ambient temperature. The MOSFET has a low on-resistance of 1.5 Ohms at 10mA drain current and 4V gate-source voltage, with a gate threshold voltage of 1.5V at 100µA.

 

This device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 330mW. It is packaged in an SC-70-3 (SOT-323) case and supplied on a reel. The NTS4001NT1G utilizes MOSFET technology and is suitable for various switching and amplification applications where space efficiency is crucial.

 

Key electrical characteristics include a gate charge of 1.3 nC at 5V and an input capacitance of 33 pF at 5V. The drive voltage ranges from 2.5V to 4V for optimal Rds On performance. Fall and rise times are specified at 23 ns, with a typical turn-off delay time of 94 ns, making it suitable for moderate speed switching circuits.

NTS4001NT1G Quick Information

Product Type: MOSFET
Series: Nts4001n
Canonical Name: NTS4001NT1G N-Channel MOSFET
Subcategory: Single

NTS4001NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTS4001NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTS4001NT1G Features

  • N-Channel MOSFET technology.
  • 30V drain-source breakdown voltage.
  • 270mA continuous drain current.
  • 1.5 Ohm maximum on-resistance.
  • SC-70-3 (SOT-323) surface mount package.

NTS4001NT1G Applications

  • Suitable for general switching applications.
  • Ideal for low-power circuit designs.
  • Used in compact electronic devices.
  • Efficient for signal level control.

NTS4001NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the NTS4001NT1G?

The drain-source breakdown voltage is 30 V.

What is the continuous drain current of the NTS4001NT1G?

The continuous drain current is 270mA.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 1.5 Ohms at 10mA drain current and 4V gate-source voltage.

What is the operating temperature range for the NTS4001NT1G?

The operating temperature range is -55°C to 150°C.

What package type is the NTS4001NT1G supplied in?

It is supplied in an SC-70-3 (SOT323) package.

What is the RoHS status of the NTS4001NT1G?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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