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NTS2101PT1G The ON Semiconductor NTS2101PT1G is a P-Channel MOSFET designed for low-voltage gate drive applications. It features a -8V drain-source breakdown voltage and a continuous drain current of 1.4A.
Mfr Part #:

NTS2101PT1G

Available from 9 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTS2101PT1G is a P-Channel MOSFET designed for low-voltage gate drive applications. It features a -8V drain-source breakdown voltage and a continuous drain current of 1.4A.
✓ Total Stock: 449,305 pcs
$ Price Range: $0.99

NTS2101PT1G Available from 9 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
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253,020 pcs
On Request
253020 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
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180,000 pcs
On Request
180000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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6,348 pcs
On Request
6348 pcs On Request 1 On Request On Request 14+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,314 pcs
On Request
3314 pcs On Request 1 On Request On Request On Request On Request On Request
Rayichip ✓
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2,793 pcs
On Request
2793 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
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1,863 pcs
On Request
1863 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
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1,863 pcs
On Request
1863 pcs On Request 1 On Request On Request On Request On Request On Request
Speed Components Ltd ✓
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100 pcs
On Request
100 pcs On Request 1 On Request On Request 1421 On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4 pcs
On Request
4 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTS2101PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTS2101PT1G Description

Short technical summary and product information.

The ON Semiconductor NTS2101PT1G is a P-Channel MOSFET utilizing trench technology for low on-resistance, contributing to extended battery life. It is rated for -8.0 V drain-to-source voltage and can handle a continuous drain current of -1.4 A at 25°C ambient temperature.

 

This MOSFET is designed for low voltage gate drive, with a gate threshold voltage typically around -0.7V and rated for -1.8V drive. Its SC-70 (SOT-323) surface-mount package offers a small footprint, making it suitable for compact designs.

 

Key electrical characteristics include a maximum Rds(on) of 100mOhm at 1A and 4.5V drive. The device operates within a temperature range of -55°C to 150°C.

 

Applications include high-side load switching, charging circuits, and single-cell battery applications found in devices like cell phones and digital cameras.

NTS2101PT1G Quick Information

Product Type: MOSFET
Series: NTS2101P
Canonical Name: NTS2101PT1G P-Channel MOSFET
Subcategory: P-Channel

NTS2101PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTS2101PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTS2101PT1G Features

  • P-Channel MOSFET with trench technology.
  • Rated for -8V drain-to-source voltage.
  • Continuous drain current of 1.4A.
  • Low Rds(on) for efficiency.
  • Compact SC-70 (SOT-323) package.

NTS2101PT1G Applications

  • High-side load switching.
  • Charging circuit applications.
  • Single-cell battery devices.
  • Portable electronics designs.

NTS2101PT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage for the NTS2101PT1G?

The drain-to-source breakdown voltage is -8V.

What is the maximum continuous drain current for the NTS2101PT1G?

The maximum continuous drain current is 1.4A at 25°C ambient temperature.

What is the typical gate threshold voltage for this P-Channel MOSFET?

The typical gate threshold voltage is -0.7V.

What is the package type for the NTS2101PT1G MOSFET?

The NTS2101PT1G is supplied in an SC-70-3 (SOT-323) package.

What is the operating temperature range for the NTS2101PT1G?

The operating junction and storage temperature range is -55°C to 150°C.

Is the NTS2101PT1G RoHS compliant?

Yes, the NTS2101PT1G is RoHS3 Compliant.

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