| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,599 pcs
|
2599 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTS2101PT1 is a P-Channel MOSFET designed for power management applications. It offers a drain-to-source voltage (Vdss) of -8V and a continuous drain current (Id) of -1.4A at 25°C. The MOSFET utilizes trench technology for low on-resistance, achieving a maximum Rds(on) of 100mOhm at 1A and 4.5V gate-source voltage. It is rated for a low gate drive voltage of 1.8V.
This device operates within a temperature range of -55°C to 150°C. Its small footprint SC-70-3 (SOT-323) surface-mount package makes it suitable for compact designs. The NTS2101PT1 is RoHS compliant and halogen-free, making it a suitable choice for applications such as high-side load switches, charging circuits, and single-cell battery applications in portable electronics like cell phones and digital cameras.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -8V.
The continuous drain current is -1.4A at 25°C.
The maximum on-resistance is 100mOhm at 1A drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The NTS2101PT1 is supplied in an SC-70-3 (SOT-323) package.
Yes, the NTS2101PT1 is RoHS3 Compliant.