| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
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9,200 pcs
$0.17
|
9200 pcs |
$0.17
|
1 | On Request | On Request | On Request | On Request | On Request |
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The NTR4502PT1G from ON Semiconductor is a P-Channel MOSFET belonging to the NTR4502P series. This small signal MOSFET is designed for efficient power management and switching applications.
Key electrical specifications include a drain-source breakdown voltage of 30V and a continuous drain current of 1.95A. The on-resistance is rated at 200 mOhms, with a gate-source threshold voltage of 1V. The device operates with a gate-source voltage of up to 10V and has a gate charge of 6 nC. Its forward transconductance is a minimum of 3s.
This MOSFET is built using silicon technology and operates in enhancement mode. It is configured as a single channel device. The operating temperature range spans from -55C to +150C, with a power dissipation of 1.25W.
The NTR4502PT1G is housed in a SOT-23-3 surface-mount package, measuring 2.9mm in length, 1.3mm in width, and 0.94mm in height. It is supplied in cut tape packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
It comes in a SOT-23-3 surface-mount package.
The operating temperature range is -55°C to +150°C.
The continuous drain current is 1.95A.