| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
131,800 pcs
|
131800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTR4171PT3G is a P-Channel MOSFET designed for power management applications. It offers a drain-to-source voltage (Vdss) of -30V and a continuous drain current (Id) of 2.2A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 75mOhm at a gate-to-source voltage (Vgs) of -10V, making it efficient for switching applications.
This device is optimized for battery and load management in portable equipment. It comes in a compact SOT-23-3 (TO-236) surface-mount package, suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ), and it has a power dissipation of 480mW (Ta).
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.4V maximum at 250µA and an input capacitance (Ciss) of 720pF at 15V. The gate charge (Qg) is a maximum of 15.6nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V
2.2 A
75 mOhm
-55°C ~ 150°C (TJ)
SOT-23-3 (TO-236)