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NTR4171PT1G The ON Semiconductor NTR4171PT1G is a P-Channel MOSFET with a drain-to-source voltage of -30V and a continuous drain current of 2.2A at 25°C. It is housed in a compact SOT-23-3 package.
Mfr Part #:

NTR4171PT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTR4171PT1G is a P-Channel MOSFET with a drain-to-source voltage of -30V and a continuous drain current of 2.2A at 25°C. It is housed in a compact SOT-23-3 package.
✓ Total Stock: 196,996 pcs
$ Price Range: $0.99

NTR4171PT1G Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTR4171PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTR4171PT1G Description

Short technical summary and product information.

The NTR4171PT1G from ON Semiconductor is a P-Channel MOSFET designed for power management applications in portable equipment. It features a drain-to-source voltage (Vdss) of -30V and a continuous drain current (Id) of 2.2A at 25°C.

 

This MOSFET offers low RDS(on) at low gate voltages, with a maximum of 75mOhm at 2.2A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of -1.4V at 250µA. Its high power and current handling capabilities make it suitable for load switching and battery management.

 

The device operates within a temperature range of -55°C to 150°C and is packaged in a surface-mount SOT-23-3 (TO-236-3) package. The standard package quantity is 3000 units on tape and reel.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±12V, input capacitance (Ciss) of 720pF at 15V, and gate charge (Qg) of 15.6nC at 10V. The power dissipation is rated at 480mW at 25°C.

NTR4171PT1G Quick Information

Product Type: MOSFET
Series: NTR4171PT1G
Canonical Name: NTR4171PT1G P-Channel MOSFET
Subcategory: Single P-Channel

NTR4171PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTR4171PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTR4171PT1G Features

  • P-Channel MOSFET technology.
  • Rated for -30V drain-to-source voltage.
  • Continuous drain current of 2.2A.
  • Low RDS(on) at low gate voltage.
  • Compact SOT-23-3 surface mount package.

NTR4171PT1G Applications

  • Optimized for battery management.
  • Suitable for load switching.
  • Used in portable equipment.
  • Ideal for cell phones and PDAs.

NTR4171PT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTR4171PT1G?

-30V

What is the continuous drain current for the NTR4171PT1G?

2.2A at 25°C

What is the package type for the NTR4171PT1G MOSFET?

SOT-23-3

What is the operating temperature range for this MOSFET?

-55°C to 150°C

Is the NTR4171PT1G RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the NTR4171PT1G?

1 Unlimited

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