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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTR4101PT1G from On Semiconductor is a P-Channel Trench MOSFET designed for power management applications in portable and computing devices. It features a leading -20V trench for low RDS(on) and is rated for low voltage gate drive down to -1.8V.
Key electrical characteristics include a maximum continuous drain current of 1.8A at 25°C, a maximum power dissipation of 420mW at 25°C, and a low Rds(on) of 85mOhm at 1.6A and 4.5V. The device operates over a wide temperature range of -55°C to 150°C.
Packaged in a small SOT-23-3 surface mount package, the NTR4101PT1G is suitable for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for various environmental requirements. Applications include charging circuits and battery protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTR4101PT1G is -20 V.
The maximum continuous drain current at 25°C is 1.8 A.
The Rds On (Max) is 85mOhm at 1.6A and 4.5V.
The operating temperature range is -55°C to 150°C (TJ).
The NTR4101PT1G is supplied in a SOT-23-3 package.
Yes, the NTR4101PT1G is RoHS3 Compliant.