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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,840 pcs
|
2840 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ TA = 85 °C, Steady State) | |
| Continuous Drain Current (Maximum @ TA=+25 °C, steady state) | |
| Continuous Drain Current (Maximum @ TA=+25 °C, t<10 s) | |
| Current - Continuous Drain (Id) @ 25°C | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-Source Voltage | |
| Drain-to-source breakdown voltage | |
| ESD HBM | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Leakage Current | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 1) | |
| Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 2) | |
| Junction To Ambient Thermal Resistance (Maximum @ t ≤ 10 s (Note 1) | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Pb-Free | |
| Power Dissipation (Maximum @ TA=25°C, Steady State) | |
| Power Dissipation (Maximum @ Ta=25 °C, t≤10 s) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Rds(on) max. | |
| Source Current (Body Diode) | |
| Tape & Reel | |
| Tape and Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = −20 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = −20 V, TJ = 25 °C) |
The NTR3A085PZT1G from On Semiconductor is a P-Channel MOSFET designed for power load switch applications. It features a leading -20V Trench for low RDS(on) and is rated for -1.8V gate drive.
Key electrical specifications include a Drain-to-Source Voltage (VDSS) of -20V and a Continuous Drain Current (ID) of -2.5A at 25°C under steady-state conditions (Note 1). The Power Dissipation (PD) is rated at 0.72W under the same conditions. The device also offers a Pulsed Drain Current (IDM) of -10A and an ESD rating of 1000V (HBM).
This MOSFET operates within a junction and storage temperature range of -55°C to 150°C. It is supplied in a compact SOT-23 package, suitable for surface mounting. The datasheet also specifies a Junction-to-Ambient thermal resistance of 175°C/W for surface-mounted devices on FR4 with a 1-inch square pad size.
The NTR3A085PZT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-2.5 A
SOT-23
RoHS3 Compliant
1 Unlimited
-55 to 150 °C