| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
339,000 pcs
|
339000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTR2101PT1 is a P-Channel MOSFET designed for small signal applications. It operates with a drain-to-source voltage of -8V and can handle a continuous drain current of up to 3.7A at 25°C ambient temperature.
This MOSFET utilizes trench technology for low on-resistance, with a typical Rds(on) of 39 mOhm at -4.5V Vgs. It is rated for a gate-to-source voltage of ±8V and has a gate threshold voltage of 1V maximum at 250µA. The device is suitable for low voltage gate drive applications, rated for 1.8V.
Packaged in a compact SOT-23 surface mount package, the NTR2101PT1 is ideal for space-constrained designs. Its operating temperature range is -55°C to 150°C. Applications include high-side load switching and DC-DC conversion in portable electronics like cell phones and notebooks.
Key electrical characteristics include a maximum power dissipation of 960mW (Ta) and an input capacitance of 1173pF. The device is Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-8 V
3.7 A at 25°C
SOT-23
-55°C to 150°C
Yes, it is RoHS3 Compliant.