| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
983 pcs
|
983 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ TA=70 °C) | |
| Current | |
| Drain Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| FET Feature | |
| Forward Transconductance | |
| Gate Body Leakage Current | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Maximum @ VDS = VGS, ID = 250 μAdc) | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Maximum @ Vds = 16 V) | |
| Lead Spacing | |
| Maximum Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| On Resistance (Typical @ VGS = 2.5 Vdc, ID = 3.3 Adc) | |
| On Resistance (Typical @ VGS = 2.5 Vdc, ID = 5.3 Adc) | |
| On Resistance (Typical @ VGS = 4.5 Vdc, ID = 6.6 Adc) | |
| Operating Temperature | |
| Package Code | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape and Reel | |
| Technology | |
| Thermal Resistance, Junction-to-Ambient (Note 1) | |
| Thermal Resistance, Junction-to-Ambient (Note 2) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Collector Current (Maximum @ VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125 °C) | |
| Zero Gate Voltage Collector Current (Maximum @ VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25 °C) |
The NTQD6968R2 from ON Semiconductor is a dual N-Channel MOSFET array designed for power management applications in portable and battery-powered products. This device features a low on-resistance of 22mOhm at 6.6A and 4.5V gate-source voltage, contributing to higher efficiency and extended battery life.
With a drain-to-source voltage rating of 20V and a continuous drain current of 6.6A at 25°C, the NTQD6968R2 is suitable for various power control tasks. It operates within a temperature range of -55°C to 150°C (TJ) and is housed in a compact 8-TSSOP surface mount package.
Key electrical characteristics include a logic level gate drive, an input capacitance of 900pF at 16V, and a gate threshold voltage of 1.2V at 250µA. The device also exhibits a high-speed, soft recovery diode. Its applications include power management in computers, printers, PCMCIA cards, and cellular telephones.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NTQD6968R2 is 20V.
The continuous drain current (Id) at 25°C for the NTQD6968R2 is 6.6A.
The typical on-resistance (Rds On) is 22mOhm when the drain current is 6.6A and the gate-source voltage is 4.5V.
The operating and storage temperature range (TJ, Tstg) is -55°C to 150°C.
The NTQD6968R2 is supplied in an 8-TSSOP package.