| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
197 pcs
|
197 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NTPF190N65S3H is a high-performance N-Channel MOSFET from the SUPERFET III FAST family, utilizing advanced charge balance technology. This device is designed for high voltage applications, offering excellent low on-resistance and reduced gate charge for superior switching performance.
Key electrical specifications include a drain-source voltage (Vds) of 650V, a maximum continuous drain current (Id) of 16A at 25°C, and a maximum on-resistance (Rds(on)) of 190mOhm at 8A and 10V gate drive. The typical gate charge (Qg) is 31nC, and the typical effective output capacitance (Coss(eff.)) is 292pF.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 32W at 25°C. It is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting.
Applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting, charger, and adapter solutions. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the NTPF190N65S3H is 650V.
The typical on-resistance (Rds(on)) for the NTPF190N65S3H is 156 mOhm at 10V gate drive.
The maximum continuous drain current (Id) for the NTPF190N65S3H is 16A at 25°C.
The operating and storage temperature range for the NTPF190N65S3H is -55°C to 150°C.
The NTPF190N65S3H is supplied in a TO-220-3 Full Pack package.
Yes, the NTPF190N65S3H is RoHS3 compliant.