| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTP5862NG is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power switching applications, featuring a maximum drain-source voltage (Vdss) of 60V and a continuous drain current of 98A at case temperature.
This MOSFET has a low on-resistance (Rds On) of 5.7mOhm at 45A and 10V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. It includes an input capacitance (Ciss) of 6000pF at 25V and a gate charge (Qg) of 82nC at 10V.
The device operates within a temperature range of -55°C to 175°C (TJ). It is packaged in a TO-220-3 case and utilizes a Through Hole mounting type, making it suitable for various power electronics designs.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTP5862NG is 60 V.
The continuous drain current for the NTP5862NG is 98A, measured at the case temperature.
The maximum on-resistance (Rds On) for the NTP5862NG is 5.7mOhm when tested at 45A and 10V.
The NTP5862NG MOSFET operates between -55°C and 175°C (TJ).
The NTP5862NG is supplied in a TO-220-3 package.