NTP5860NG The On Semiconductor NTP5860NG is an N-Channel Power MOSFET with a 60V drain-to-source voltage. It features a low Rds On of 3mOhm at 75A, 10V.
Mfr Part #:

NTP5860NG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTP5860NG is an N-Channel Power MOSFET with a 60V drain-to-source voltage. It features a low Rds On of 3mOhm at 75A, 10V.
✓ Total Stock: 1,250 pcs
$ Price Range: $0.99

NTP5860NG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,250 pcs
1250 pcs On Request 1 On Request On Request On Request On Request On Request

NTP5860NG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTP5860NG Description

Short technical summary and product information.

The NTP5860NG from On Semiconductor is an N-Channel Power MOSFET designed for various applications. It offers a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current of 220A at 25°C (Tc).

 

This MOSFET boasts a low Rds On (Drain-to-Source On-Resistance) of 3mOhm, measured at 75A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 180 nC at 10V Vgs, and the input capacitance (Ciss) is 10760 pF at 25V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA Id.

 

With a maximum power dissipation of 283W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the NTP5860NG is suitable for demanding environments. It is packaged in a TO-220-3 case and utilizes Through Hole mounting.

 

The MOSFET technology is Metal Oxide Semiconductor (MOSFET). The maximum gate-source voltage (Vgs) is ±20V, and the drive voltage for maximum Rds On is 10V.

NTP5860NG Quick Information

Product Type: MOSFET
Series: NTP5860NG
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel

NTP5860NG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTP5860NG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTP5860NG Features

  • N-Channel MOSFET technology.
  • 60V drain-to-source voltage.
  • Low 3mOhm Rds On.
  • 220A continuous drain current.
  • TO-220-3 package, Through Hole mount.

NTP5860NG Applications

  • Used in high-current power supplies
  • Suitable for motor control circuits
  • Ideal for power management applications
  • Designed for high-efficiency switching

NTP5860NG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the NTP5860NG MOSFET?

The NTP5860NG MOSFET has a maximum drain-to-source voltage (Vdss) of 60V.

What package type is the NTP5860NG MOSFET?

The NTP5860NG MOSFET is supplied in a TO-220-3 package.

What is the operating temperature range of the NTP5860NG?

The operating temperature range for the NTP5860NG is -55°C to 175°C (TJ).

Is the NTP5860NG RoHS compliant?

The NTP5860NG is RoHS3 Compliant.

What is the Rds On for the NTP5860NG MOSFET?

The Rds On is a maximum of 3mOhm at 75A, 10V.

What is the continuous drain current for the NTP5860NG?

The continuous drain current for the NTP5860NG is 220A at 25°C (Tc).

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