| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTP52N10G from On Semiconductor is an N-Channel MOSFET featuring a 100V drain-to-source voltage rating and a continuous drain current capability of 60A at 25°C ambient temperature. This device is housed in a TO-220 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum Rds(on) of 30mOhm at 26A and 10V gate drive, and a gate threshold voltage of 4V maximum at 250µA. The MOSFET also specifies a maximum power dissipation of 214W at 25°C case temperature and an operating temperature range from -55°C to 175°C.
Designed for applications such as PWM motor controls, power supplies, and converters, the NTP52N10G offers features like specified avalanche energy and comparable source-to-drain diode recovery time. The Pb-free package option is also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 100V.
The continuous drain current (Id) is 60A at 25°C ambient temperature.
The maximum Rds(on) is 30mOhm when measured at 26A drain current and 10V gate-source voltage.
The operating and storage temperature range is -55°C to 175°C.
The NTP52N10G is supplied in a TO-220 package.
Yes, a Pb-Free package is available.