| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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66,400 pcs
|
66400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTP190N65S3HF is a high-voltage N-Channel MOSFET from On Semiconductor's SUPERFET III family, utilizing charge balance technology for low on-resistance and reduced gate charge. This device is rated for a maximum drain-source voltage of 650V and a continuous drain current of 20A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 190mOhm at 10A and 10V, and a typical gate charge of 34nC. The MOSFET is designed to minimize conduction loss and provide superior switching performance, making it suitable for various power applications.
This component features an optimized reverse recovery performance of its body diode, which can help remove additional components and improve system reliability. It is packaged in a TO-220-3 through-hole package, suitable for applications requiring robust thermal management.
Applications for the NTP190N65S3HF include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting, charger, and adapter systems. The device operates within a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
The continuous drain current is 20 A at 25°C case temperature.
The maximum on-resistance is 190mOhm at 10A and 10V.
The typical gate charge is 34 nC at 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-220-3 package.