| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTP095N65S3H is a power MOSFET designed for various electronic applications. It is an N-Channel device with a high drain-source breakdown voltage of 650V and a continuous drain current capability of 30A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 95mOhm when measured at a drain current of 15A and a gate-source voltage of 10V. The gate charge (Qg) is specified at 58nC at 10V, and the gate-source threshold voltage (Vgs(th)) is 4V at 2.8mA. The device can handle a maximum gate-source voltage of ±30V.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 208W at the case temperature. The technology used is MOSFET (Metal Oxide).
This component is classified under the SUPERFET family and C0041 III series, indicating its advanced performance characteristics for power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) is 650 V.
The continuous drain current (Id) is 30 A.
The maximum Rds On is 95 mOhm at 15A, 10V.
The operating temperature range is -55°C to 150°C (TJ).
The MOSFET is in a TO-220-3 package.
The MOSFET is mounted using the through-hole method.