| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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59,620 pcs
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59620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,925 pcs
|
5925 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTNUS3171PZT5G is a single P-Channel MOSFET designed by On Semiconductor for applications requiring a low RDS(on) solution in an ultra-small footprint. This device features a drain-to-source voltage of -20V and a continuous drain current of up to 150mA at 25°C ambient temperature.
With its SOT-1123 package measuring only 1.0 x 0.6 mm and an ultra-thin profile (< 0.5 mm), the NTNUS3171PZT5G is well-suited for extremely thin environments such as portable electronics. It offers a low RDS(on) of 3.5 Ohm at a gate-source voltage of -4.5V, making it efficient for power management tasks.
Key electrical characteristics include a gate threshold voltage of -1V maximum at 250µA and a gate-to-source voltage rating of ±8V. The device operates within a junction temperature range of -55°C to 150°C. It is mounted using the surface mount technique.
This MOSFET is suitable for applications like high-side switching and high-speed interfacing, optimized for power management in ultra-portable equipment. The device is Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTNUS3171PZT5G is -20 V.
The maximum continuous drain current is -150 mA at 25°C ambient temperature.
This MOSFET is supplied in the SOT-1123 package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.