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NTNS3A65PZT5G The ON Semiconductor NTNS3A65PZT5G is a P-Channel MOSFET designed for small signal applications. It features a -20V drain-to-source voltage and a maximum continuous drain current of 281mA.
Mfr Part #:

NTNS3A65PZT5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTNS3A65PZT5G is a P-Channel MOSFET designed for small signal applications. It features a -20V drain-to-source voltage and a maximum continuous drain current of 281mA.
✓ Total Stock: 2,570 pcs
$ Price Range: $0.99

NTNS3A65PZT5G Available from 1 distributor

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✓ Non-Authorised
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2,570 pcs
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NTNS3A65PZT5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTNS3A65PZT5G Description

Short technical summary and product information.

The ON Semiconductor NTNS3A65PZT5G is a single P-Channel MOSFET designed for use in ultra-thin environments such as portable electronics. It is housed in an ultra-low profile SOT-883 (XDFN3) package measuring 1.0 x 0.6 x 0.4 mm.

 

Key electrical specifications include a drain-to-source voltage of -20V, a maximum continuous drain current of 281mA at 25°C ambient temperature, and a maximum on-resistance of 1.3 Ohms at 200mA and 4.5V gate-to-source voltage. The device operates over a temperature range of -55°C to 150°C.

 

This MOSFET is suitable for applications requiring high-side switching and high-speed interfacing, optimized for power management in ultra-portable solutions. It is Pb-free, halogen-free/BFR-free, and RoHS compliant.

 

The SOT-883 package is surface-mounted and ideal for space-constrained designs. The device is supplied on tape and reel.

NTNS3A65PZT5G Quick Information

Product Type: MOSFET
Canonical Name: NTNS3A65PZT5G P-Channel MOSFET
Subcategory: P-Channel

NTNS3A65PZT5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTNS3A65PZT5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTNS3A65PZT5G Features

  • Single P-Channel MOSFET design.
  • Ultra-low profile SOT-883 package.
  • -20V drain-to-source voltage rating.
  • 281mA maximum continuous drain current.
  • Low on-resistance solution.

NTNS3A65PZT5G Applications

  • Suitable for high-side switching.
  • Ideal for high-speed interfacing.
  • Optimized for portable power management.
  • Designed for thin environments.

NTNS3A65PZT5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTNS3A65PZT5G?

The drain-to-source voltage is -20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 281mA at 25°C ambient temperature.

What is the maximum on-resistance of the NTNS3A65PZT5G?

The maximum on-resistance is 1.3 Ohms when measured at 200mA drain current and 4.5V gate-to-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NTNS3A65PZT5G in?

The NTNS3A65PZT5G is in a SOT-883 (XDFN3) package.

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