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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,064,000 pcs
|
1064000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,282 pcs
|
2282 pcs | On Request | 1 | On Request | On Request | 1918+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| BFR Free | |
| Continuous Drain Current (Nominal @ Ta=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction-to-Ambient Steady State | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| On Resistance (Maximum @ VGS = 4.5 V, ID) | |
| Operating Temperature | |
| Pb-Free | |
| Power Dissipation (Max) | |
| Power Dissipation (Nominal/Maximum @ Ta = 25 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTNS3193NZT5G is a single N-Channel MOSFET designed for small signal load switching, analog switching, and high-speed interfacing. It features an ultra-small and thin XLLGA3 package measuring 0.62 x 0.62 x 0.4 mm, making it suitable for power management in ultra-portable products.
This MOSFET has a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of 224mA at 25°C ambient temperature. The on-resistance (RDS(on)) is a maximum of 1.4 Ohms at 100mA and 4.5V gate-to-source voltage. The gate-to-source voltage (VGS) range is ±8V, with a gate threshold voltage (VGS(th)) of 1V maximum at 250µA.
Key electrical characteristics include an input capacitance (Ciss) of 15.8 pF at 15V and a gate charge (Qg) of 0.7 nC at 4.5V. The device operates within a junction temperature range of -55°C to 150°C. It is constructed using MOSFET (Metal Oxide) technology.
The NTNS3193NZT5G is mounted on the surface and comes in a 3-XLLGA package. It is Pb-free, Halogen-free/BFR-free, and RoHS compliant. The maximum power dissipation is 120mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 1040 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (VDSS) is 20V.
The continuous drain current is 224mA at 25°C ambient temperature.
The Rds On (Max) is 1.4 Ohm at 100mA drain current and 4.5V gate-to-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is in a 3-XLLGA package.
Yes, it is RoHS3 Compliant.