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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92,000 pcs
|
92000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
870 pcs
|
870 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ TA = +85 °C) | |
| Continuous Drain Current (Typical/Maximum @ TA = 25 °C) | |
| Current | |
| Drain To Source On Resistance (Maximum @ Id = 100 mA, Vgs = 4.5 V) | |
| Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 1.5 V) | |
| Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 1.8 V) | |
| Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 2.5 V) | |
| Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 4.5 V) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Maximum @ Vgs = Vds, Id = 250 µA) | |
| Gate Threshold Voltage Temperature Coefficient | |
| Gate to Source Voltage (Vgs) | |
| Gate-to-Source Leakage Current | |
| Halogen Free | |
| Input Capacitance (Ciss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (Maximum @ t ≤ 5 s) | |
| Junction-to-Ambient Thermal Resistance (Maximum @ Steady-State) | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Minimum | |
| Pb-Free | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TA=25 °C, t<5 s) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The ON Semiconductor NTNS3190NZT5G is a single N-Channel MOSFET designed for applications requiring small signal load switching, analog switching, and high-speed interfacing. It is optimized for power management in ultra-portable products.
This MOSFET offers a drain-to-source voltage of 20V and a continuous drain current of 224mA at 25°C ambient temperature. Key electrical characteristics include a low Rds(on) of 1.4 Ohm at 100mA and 4.5V Vgs, and a gate threshold voltage of 1V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C.
Packaged in an ultra-small and thin 3-XLLGA (0.62x0.62 mm) surface-mount package, the NTNS3190NZT5G is suitable for space-constrained designs. It is Pb-free, Halogen-free/BFR-free, and RoHS compliant, making it suitable for environmentally conscious manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTNS3190NZT5G is 20V.
The continuous drain current is 224mA at 25°C ambient temperature.
The NTNS3190NZT5G is supplied in a 3-XLLGA package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the NTNS3190NZT5G is RoHS 3 compliant.