NTNS3190NZT5G The ON Semiconductor NTNS3190NZT5G is a single N-Channel MOSFET designed for small signal load switching and high-speed interfacing. It features a 20V drain-to-source voltage and 224mA continuous drain current.
Mfr Part #:

NTNS3190NZT5G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTNS3190NZT5G is a single N-Channel MOSFET designed for small signal load switching and high-speed interfacing. It features a 20V drain-to-source voltage and 224mA continuous drain current.
Total Stock: 92,870 pcs
$ Price Range: $0.99

NTNS3190NZT5G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
92,000 pcs
92000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
870 pcs
870 pcs On Request 1 On Request On Request 18+ On Request On Request

NTNS3190NZT5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Maximum @ TA = +85 °C)
Continuous Drain Current (Typical/Maximum @ TA = 25 °C)
Current
Drain To Source On Resistance (Maximum @ Id = 100 mA, Vgs = 4.5 V)
Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 1.5 V)
Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 1.8 V)
Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 2.5 V)
Drain To Source On Resistance (Maximum @ Id = 224 mA, Vgs = 4.5 V)
Drain to Source Voltage (Vdss)
Drain-to-Source Breakdown Voltage Temperature Coefficient
Drain-to-source breakdown voltage
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg)
Gate Charge (Qg) (Max) @ Vgs
Gate Threshold Voltage (Minimum/Maximum @ Vgs = Vds, Id = 250 µA)
Gate Threshold Voltage Temperature Coefficient
Gate to Source Voltage (Vgs)
Gate-to-Source Leakage Current
Halogen Free
Input Capacitance (Ciss)
Input Capacitance (Ciss) (Max) @ Vds
Junction To Ambient Thermal Resistance (Maximum @ t ≤ 5 s)
Junction-to-Ambient Thermal Resistance (Maximum @ Steady-State)
Lead Spacing
Mounting Type
Operating Temperature
Operating Temperature - Minimum
Pb-Free
Power Dissipation (Max)
Power Dissipation (Maximum @ TA=25 °C, t<5 s)
Power Dissipation (Maximum) @ TA=25°C
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Zero Gate Voltage Drain Current

NTNS3190NZT5G Description

Short technical summary and product information.

The ON Semiconductor NTNS3190NZT5G is a single N-Channel MOSFET designed for applications requiring small signal load switching, analog switching, and high-speed interfacing. It is optimized for power management in ultra-portable products.

 

This MOSFET offers a drain-to-source voltage of 20V and a continuous drain current of 224mA at 25°C ambient temperature. Key electrical characteristics include a low Rds(on) of 1.4 Ohm at 100mA and 4.5V Vgs, and a gate threshold voltage of 1V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in an ultra-small and thin 3-XLLGA (0.62x0.62 mm) surface-mount package, the NTNS3190NZT5G is suitable for space-constrained designs. It is Pb-free, Halogen-free/BFR-free, and RoHS compliant, making it suitable for environmentally conscious manufacturing processes.

NTNS3190NZT5G Quick Information

Product Type: MOSFET
Series: NTNS3190NZT5G
Canonical Name: On Semiconductor NTNS3190NZT5G N-Channel MOSFET
Subcategory: N-Channel

NTNS3190NZT5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTNS3190NZT5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTNS3190NZT5G Features

  • Single N-Channel MOSFET design.
  • Ultra-small 3-XLLGA package.
  • 20V drain-to-source voltage.
  • 224mA continuous drain current.
  • Low Rds(on) for efficient switching.

NTNS3190NZT5G Applications

  • Ideal for small signal load switches.
  • Suitable for analog switch applications.
  • Used in high-speed interfacing.
  • Optimized for portable product power management.

NTNS3190NZT5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTNS3190NZT5G?

The drain-to-source voltage (Vdss) for the NTNS3190NZT5G is 20V.

What is the continuous drain current of the NTNS3190NZT5G?

The continuous drain current is 224mA at 25°C ambient temperature.

What is the package type for the NTNS3190NZT5G?

The NTNS3190NZT5G is supplied in a 3-XLLGA package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

Is the NTNS3190NZT5G RoHS compliant?

Yes, the NTNS3190NZT5G is RoHS 3 compliant.

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