NTNS0K8N021ZTCG The ON Semiconductor NTNS0K8N021ZTCG is an N-Channel MOSFET designed for space-constrained applications. It offers a 20V drain-to-source voltage and 220mA continuous drain current.
Mfr Part #:

NTNS0K8N021ZTCG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTNS0K8N021ZTCG is an N-Channel MOSFET designed for space-constrained applications. It offers a 20V drain-to-source voltage and 220mA continuous drain current.
✓ Total Stock: 12,900 pcs
$ Price Range: $0.99

NTNS0K8N021ZTCG Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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11,900 pcs
11900 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NTNS0K8N021ZTCG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTNS0K8N021ZTCG Description

Short technical summary and product information.

The NTNS0K8N021ZTCG from ON Semiconductor is a single N-Channel MOSFET designed for applications requiring high performance in a compact form factor. This device features a low profile XDFN3 package, measuring 0.62 x 0.42 x 0.4 mm, making it ideal for extremely space-constrained designs.

 

Key electrical characteristics include a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of 220mA at 25°C ambient temperature. The MOSFET offers a low gate drive requirement, with a gate threshold voltage (VGS(th)) as low as 1V at 250µA. Its on-resistance (RDS(on)) is specified at a maximum of 1.5 Ohms at 100mA drain current and 4.5V gate-to-source voltage, with lower values available at reduced gate drive voltages.

 

This MOSFET is suitable for applications such as small signal load switching, high-speed interfacing, and level shifting. The device operates within a junction temperature range of -55°C to 150°C and is surface-mounted. It is also specified as Pb-Free and Halogen Free, complying with RoHS standards.

NTNS0K8N021ZTCG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NTNS0K8N021ZTCG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTNS0K8N021ZTCG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTNS0K8N021ZTCG Features

  • Ultra small XDFN3 package for space saving.
  • 20V drain-to-source voltage rating.
  • 220mA continuous drain current.
  • Low 1.5V gate drive capability.
  • Pb-Free and Halogen Free compliant.

NTNS0K8N021ZTCG Applications

  • Ideal for small signal load switching.
  • Suitable for high-speed interfacing.
  • Used for level shifting applications.
  • Designed for space-constrained applications.

NTNS0K8N021ZTCG FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTNS0K8N021ZTCG?

The maximum drain-to-source voltage (VDSS) is 20 V.

What is the package type for this MOSFET?

The package type is 3-XDFN, specifically 3-XDFN (0.42x0.62).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

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