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6,936 pcs
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6936 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTMYS9D3N06CLTWG is a N-channel MOSFET manufactured by On Semiconductor. It is rated for a maximum drain-source voltage of 60V and a maximum continuous drain current of 14A at ambient temperature Ta. The device is designed for switching applications and is packaged in a T6 LFPAK4 surface-mount package, which allows for compact and efficient mounting on circuit boards.
This MOSFET is suitable for use in power management, motor control, and switching power supplies. Its low on-resistance and high current capability make it appropriate for high-efficiency applications. The LFPAK4 package provides good thermal performance and ease of mounting in surface-mount technology.
The device's specifications include a maximum drain current of 14A at Ta and a maximum drain current of 50A at Tc. It is compliant with RoHS standards and has a Moisture Sensitivity Level of 1 Unlimited. The device's environmental compliance status for RoHS, REACH, and MSL is unverified.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current at Ta is 14A.
The maximum drain current at Tc is 50A.
The maximum drain-source voltage is 60V.
It comes in a T6 LFPAK4 surface-mount package.
Yes, it is RoHS3 compliant.