| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMYS8D0N04CTWG is a single N-Channel Power MOSFET. It features a drain-to-source voltage (Vdss) of 40V and a maximum continuous drain current of 49A at 25°C case temperature.
This MOSFET boasts a low on-resistance (Rds(on)) of 8.1mOhm at 15A and 10V gate-to-source voltage, minimizing conduction losses. It also offers low gate charge (Qg) and capacitance, reducing driver losses. The operating temperature range is -55°C to +175°C.
Designed for compact applications, it utilizes the LFPAK4 package with a 5x6mm footprint and surface mount type. The device is Pb-free and RoHS compliant, making it suitable for various electronic designs requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current is 49A at 25°C case temperature.
The Rds(on) is a maximum of 8.1mOhm at 15A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is in the LFPAK4 (5x6mm) package, which is a surface mount type.
Yes, the device is RoHS compliant.