NTMYS5D3N04CTWG The NTMYS5D3N04CTWG is an N-Channel MOSFET from On Semiconductor. It features a 40V drain-to-source voltage and a low Rds(on) of 5.3mOhm at 35A, 10V.
Mfr Part #:

NTMYS5D3N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTMYS5D3N04CTWG is an N-Channel MOSFET from On Semiconductor. It features a 40V drain-to-source voltage and a low Rds(on) of 5.3mOhm at 35A, 10V.
✓ Total Stock: 33,000 pcs
$ Price Range: $0.99

NTMYS5D3N04CTWG Available from 1 distributor

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✓ Non-Authorised
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NTMYS5D3N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMYS5D3N04CTWG Description

Short technical summary and product information.

The NTMYS5D3N04CTWG is a single N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power applications with a drain-to-source voltage (Vdss) of 40V.

 

Key electrical specifications include a maximum on-resistance (Rds(on)) of 5.3mOhm when tested at 35A drain current and 10V gate-to-source voltage. The continuous drain current is rated at 71A under case temperature conditions and 19A under ambient conditions. The gate charge (Qg) is 16nC at 10V, and input capacitance (Ciss) is 1000pF at 25V.

 

This MOSFET operates within a junction temperature range of -55°C to +175°C. It is housed in a compact LFPAK4 (5x6 mm) package, suitable for surface mounting.

 

The device is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1.

NTMYS5D3N04CTWG Quick Information

Product Type: MOSFET
Series: NTMYS5D3N04CTWG
Canonical Name: NTMYS5D3N04CTWG N-Channel MOSFET
Subcategory: N-Channel

NTMYS5D3N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMYS5D3N04CTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMYS5D3N04CTWG Features

  • 40V drain-to-source voltage rating.
  • Low 5.3mOhm Rds(on) at 35A, 10V.
  • High 71A continuous drain current (Tc).
  • Compact LFPAK4 (5x6 mm) package.
  • N-Channel MOSFET technology.

NTMYS5D3N04CTWG Applications

  • Suitable for high-current power switching applications.
  • Ideal for motor control and inverter circuits.
  • Used in power supply and voltage regulation modules.
  • Applicable in automotive and industrial power systems.

NTMYS5D3N04CTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTMYS5D3N04CTWG?

The drain-to-source voltage is 40V.

What is the maximum on-resistance of the NTMYS5D3N04CTWG?

The maximum on-resistance is 5.3mOhm at 35A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 71A when measured at the case temperature and 19A when measured at ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMYS5D3N04CTWG in?

It is supplied in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023.

Is the NTMYS5D3N04CTWG RoHS compliant?

Yes, the NTMYS5D3N04CTWG is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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