NTMYS4D6N04CLTWG The ON Semiconductor NTMYS4D6N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 78A at 25°C case temperature and a low on-resistance of 4.5mOhm.
Mfr Part #:

NTMYS4D6N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMYS4D6N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 78A at 25°C case temperature and a low on-resistance of 4.5mOhm.
✓ Total Stock: 8,700 pcs
$ Price Range: $0.99

NTMYS4D6N04CLTWG Available from 1 distributor

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✓ Non-Authorised
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NTMYS4D6N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMYS4D6N04CLTWG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NTMYS4D6N04CLTWG, is designed for power applications requiring efficient switching. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 78A when measured at the case temperature of 25°C, and 21A when measured at an ambient temperature of 25°C.

 

The MOSFET exhibits a low on-state resistance (Rds(on)) of 4.5mOhm at a gate-source voltage of 10V and a drain current of 35A, minimizing conduction losses. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 40µA.

 

Packaged in a compact LFPAK4 (5x6 mm) surface-mount package, this device is suitable for designs where space is a constraint. It operates across a wide temperature range from -55°C to 175°C (TJ). The device is specified with an input capacitance of 1300pF at 25V and a gate charge of 23nC at 10V, contributing to reduced driver losses.

NTMYS4D6N04CLTWG Quick Information

Product Type: MOSFET
Series: NTMYS4D6N04CLTWG
Canonical Name: On Semiconductor NTMYS4D6N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NTMYS4D6N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMYS4D6N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMYS4D6N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • 78A continuous drain current capability.
  • Low 4.5mOhm on-resistance.
  • Compact LFPAK4 surface-mount package.
  • Wide -55°C to 175°C operating temperature.

NTMYS4D6N04CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact power designs.
  • Used in high-efficiency circuits.
  • Supports wide temperature ranges.

NTMYS4D6N04CLTWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMYS4D6N04CLTWG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current of the NTMYS4D6N04CLTWG?

The continuous drain current is 78A when measured at the case temperature of 25°C, and 21A when measured at an ambient temperature of 25°C.

What is the on-resistance of the NTMYS4D6N04CLTWG?

The on-resistance (Rds(on)) is a maximum of 4.5mOhm at a drain current of 35A and gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMYS4D6N04CLTWG in?

It is supplied in the LFPAK4 (5x6 mm) package, which is a surface-mount type.

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