| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,600 pcs
|
17600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMYS4D5N04CTWG from ON Semiconductor is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 20A at 25°C ambient temperature and 80A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 4.5mOhm at 35A and 10V gate drive voltage, and a maximum gate charge (Qg) of 18nC at 10V. The input capacitance (Ciss) is 1150pF at 25V.
This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in a SOT-1023, 4-LFPAK package, suitable for surface mounting. The maximum power dissipation is 3.6W (Ta) and 55W (Tc).
The NTMYS4D5N04CTWG is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 20A at 25°C (Ta) and 80A at 25°C (Tc).
The Rds On (Max) is 4.5mOhm at 35A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.