NTMYS3D8N04CLTWG The ON Semiconductor NTMYS3D8N04CLTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It features a low on-resistance of 3.7mOhm at 20A and 10V gate drive.
Mfr Part #:

NTMYS3D8N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMYS3D8N04CLTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It features a low on-resistance of 3.7mOhm at 20A and 10V gate drive.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NTMYS3D8N04CLTWG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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NTMYS3D8N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMYS3D8N04CLTWG Description

Short technical summary and product information.

This NTMYS3D8N04CLTWG is an N-Channel MOSFET from ON Semiconductor, designed for various power switching applications. It offers a drain-to-source voltage (Vdss) of 40V and can handle continuous currents of 22A (at ambient temperature) and 87A (at case temperature).

 

The MOSFET exhibits a low on-resistance (Rds On) of 3.7mOhm at a test condition of 20A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 18nC maximum at 10V and an input capacitance (Ciss) of 1600pF maximum at 25V. The gate threshold voltage (Vgs(th)) is 2V maximum at 50µA, with a maximum gate-source voltage (Vgs) of 20V.

 

Designed for surface mounting, this component comes in a SOT-1023, 4-LFPAK package, specifically the LFPAK4 (5x6) supplier device package. It operates within a wide temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 3.6W at ambient temperature and 55W at case temperature.

NTMYS3D8N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NTMYS3D8N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NTMYS3D8N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMYS3D8N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMYS3D8N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • High continuous current capability.
  • Low on-resistance for efficiency.
  • Wide operating temperature range.
  • Surface mountable LFPAK4 package.

NTMYS3D8N04CLTWG Applications

  • Power switching applications.
  • Efficient power management.
  • High current DC-DC converters.
  • Load switch circuits.

NTMYS3D8N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMYS3D8N04CLTWG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous current rating of the NTMYS3D8N04CLTWG?

The continuous current rating is 22A at ambient temperature and 87A at case temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 3.7mOhm when tested at 20A and 10V gate drive.

What is the operating temperature range for the NTMYS3D8N04CLTWG?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTMYS3D8N04CLTWG supplied in?

It is supplied in a SOT-1023, 4-LFPAK package, specifically the LFPAK4 (5x6) supplier device package.

How is the NTMYS3D8N04CLTWG mounted?

The mounting type is Surface Mount.

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