| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from ON Semiconductor, part number NTMYS2D9N04CLTWG, offers a 40V drain-to-source voltage and a maximum on-resistance of 2.8mOhm at 10V gate drive. It can handle continuous drain currents of up to 110A at case temperature and 27A at ambient temperature, with a maximum power dissipation of 68W at case temperature.
The device features a low gate charge and capacitance, contributing to minimized driver losses. It operates within a wide temperature range of -55°C to 175°C. The MOSFET is housed in a SOT-1023, 4-LFPAK package, designed for surface mounting.
Key electrical characteristics include a gate threshold voltage of 2V at 11µA and a gate-to-source voltage range of ±20V. The input capacitance is rated at 2100 pF at 20V.
This component is suitable for various power management applications where efficient switching and low conduction losses are critical. Its compact LFPAK package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTMYS2D9N04CLTWG MOSFET is 40V.
The maximum on-resistance (Rds On) for the NTMYS2D9N04CLTWG is 2.8mOhm when tested at 40A drain current and 10V gate-to-source voltage.
The NTMYS2D9N04CLTWG has a continuous drain current rating of 110A at case temperature and 27A at ambient temperature.
The NTMYS2D9N04CLTWG MOSFET is supplied in a 4-LFPAK package, also referred to as SOT-1023.
The operating junction and storage temperature range for the NTMYS2D9N04CLTWG is -55°C to 175°C.