NTMYS2D4N04CTWG The On Semiconductor NTMYS2D4N04CTWG is a single N-Channel Power MOSFET. It features a 40V drain-source voltage and a continuous drain current of 138A.
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NTMYS2D4N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMYS2D4N04CTWG is a single N-Channel Power MOSFET. It features a 40V drain-source voltage and a continuous drain current of 138A.
✓ Total Stock: 14,706 pcs
$ Price Range: $0.99

NTMYS2D4N04CTWG Available from 1 distributor

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NTMYS2D4N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMYS2D4N04CTWG Description

Short technical summary and product information.

The NTMYS2D4N04CTWG is a single N-Channel Power MOSFET manufactured by On Semiconductor. This device is designed for applications requiring efficient power switching and conduction. It boasts a drain-to-source voltage (Vdss) of 40V and a maximum continuous drain current (Id) of 138A at 25°C case temperature.

 

The MOSFET exhibits a low on-resistance (Rds(on)) of 2.3mOhm at 50A and 10V gate drive, minimizing conduction losses. It also features a low gate charge (Qg) of 32nC at 10V, which helps reduce driver losses. The operating temperature range is from -55°C to 175°C.

 

Packaged in a compact LFPAK4 (5x6 mm) surface-mount package, the NTMYS2D4N04CTWG is suitable for designs where space is a constraint. Its thermal performance is supported by a maximum power dissipation of 83W at 25°C case temperature and 3.9W at 25°C ambient temperature.

 

This MOSFET is RoHS3 compliant and has an MSL rating of 1 Unlimited, indicating its suitability for various industrial and commercial applications.

NTMYS2D4N04CTWG Quick Information

Product Type: Single MOSFET
Canonical Name: NTMYS2D4N04CTWG Single N-Channel Power MOSFET
Subcategory: MOSFETs - Single

NTMYS2D4N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMYS2D4N04CTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMYS2D4N04CTWG Features

  • 40V drain-to-source voltage rating.
  • 138A maximum continuous drain current.
  • Low 2.3mOhm on-resistance.
  • Compact LFPAK4 surface-mount package.
  • Wide -55°C to 175°C operating temperature.

NTMYS2D4N04CTWG Applications

  • Suitable for power switching applications.
  • Ideal for designs with space constraints.
  • Efficient conduction loss minimization.
  • Low driver loss requirements.

NTMYS2D4N04CTWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMYS2D4N04CTWG?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current of the NTMYS2D4N04CTWG?

The continuous drain current is 138A at 25°C case temperature and 30A at 25°C ambient temperature.

What is the on-resistance of the NTMYS2D4N04CTWG?

The on-resistance (Rds(on)) is a maximum of 2.3mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTMYS2D4N04CTWG in?

The NTMYS2D4N04CTWG is in an LFPAK4 (5x6 mm) package, suitable for surface mounting.

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