| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NTMYS2D1N04CLTWG is an N-channel MOSFET manufactured by ON Semiconductor. It is designed for power switching applications and features a maximum drain-source voltage of 40V. The device can handle a continuous drain current of 29A when measured at ambient temperature and up to 132A when measured at case temperature.
The MOSFET is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended storage conditions. Its REACH status is unaffected.
This component is suitable for various power management tasks in electronic circuits. Its specifications suggest it can be used in applications requiring efficient power switching and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 29A at ambient temperature and 132A at case temperature.
The maximum drain-source voltage is 40V.
Yes, the NTMYS2D1N04CLTWG MOSFET is RoHS3 compliant.
The Moisture Sensitivity Level is 1.