| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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306 pcs
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306 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTMYS1D2N04CLTWG from On Semiconductor is a single N-Channel MOSFET designed for power applications requiring compact solutions. It features a low on-resistance of 1.2 mOhm at 50A and 10V gate drive, minimizing conduction losses. With a drain-to-source voltage of 40V and continuous drain current ratings of 258A at 25°C case temperature and 44A at 25°C ambient temperature, this MOSFET is suitable for demanding applications.
The device is housed in an LFPAK4 package, measuring 5x6 mm, which offers a small footprint for space-constrained designs. It operates over a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate threshold voltage of 2V maximum and input capacitance of 6330 pF. The low gate charge and capacitance contribute to minimizing driver losses.
This MOSFET is Pb-Free and RoHS Compliant, making it suitable for environmentally conscious designs. Its robust thermal performance is supported by a junction-to-case thermal resistance of 1.12 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 40V.
The maximum continuous drain current is 258A when measured at the case temperature of 25°C, and 44A when measured at an ambient temperature of 25°C.
The maximum on-resistance (Rds On) is 1.2 mOhm when tested at a drain current of 50A and a gate-to-source voltage of 10V.
The operating junction and storage temperature range is from -55°C to 175°C.
This MOSFET is supplied in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK, and is designed for surface mounting.