| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMYS021N06CLTWG is a single N-Channel MOSFET belonging to the power MOSFET family. It is designed for efficient power switching with a drain-to-source voltage (Vdss) of 60V. The device features a low on-resistance (Rds(on)) of 21mOhm at 10A and 10V gate-source voltage, minimizing conduction losses.
Key electrical characteristics include a maximum gate-to-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 16µA. The input capacitance (Ciss) is 410pF at 25V, and the gate charge (Qg) is 5nC at 10V, contributing to minimized driver losses.
This MOSFET has a continuous drain current rating of 27A when measured at the case temperature (Tc) of 25°C and 9.8A when measured at the ambient temperature (Ta) of 25°C. Power dissipation is rated at 28W (Tc) and 3.8W (Ta) at 25°C. The operating temperature range is -55°C to 175°C (TJ).
The NTMYS021N06CLTWG is housed in a compact LFPAK4 (5x6 mm) package, suitable for surface mounting. It is Pb-Free and RoHS Compliant, making it suitable for various electronic designs requiring efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The on-resistance (Rds On) is a maximum of 21mOhm when measured at 10A drain current and 10V gate-source voltage.
The continuous drain current is 27A when measured at the case temperature (Tc) of 25°C and 9.8A when measured at the ambient temperature (Ta) of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in the LFPAK4 (5x6 mm) package, which is suitable for surface mounting.
Yes, the device is RoHS3 Compliant.