NTMTSC4D2N10GTXG The On Semiconductor NTMTSC4D2N10GTXG is a 100V N-Channel MOSFET designed for power applications. It features low Rds(on) and a compact 8-PowerTDFN package.
Mfr Part #:

NTMTSC4D2N10GTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMTSC4D2N10GTXG is a 100V N-Channel MOSFET designed for power applications. It features low Rds(on) and a compact 8-PowerTDFN package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NTMTSC4D2N10GTXG Available from 1 distributor

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✓ Non-Authorised
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NTMTSC4D2N10GTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMTSC4D2N10GTXG Description

Short technical summary and product information.

The NTMTSC4D2N10GTXG from On Semiconductor is a high-performance N-Channel MOSFET. It offers a Drain-to-Source Voltage (Vdss) of 100V and a low On-State Resistance (Rds(on)) of 4.2mOhm at a gate-source voltage of 10V and drain current of 88A. This device is capable of handling a continuous drain current of up to 178A at 25°C case temperature and 21A at 25°C ambient temperature.

 

With a maximum power dissipation of 267W (Tc=25°C) and 3.9W (Ta=25°C), it is suitable for demanding applications. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It features a Gate-to-Source Voltage (Vgs) range of ±20V and a Gate-to-Source Threshold Voltage (Vgs(th)) of 4V maximum at 450µA.

 

The NTMTSC4D2N10GTXG comes in an 8-PowerTDFN package with surface mount, wettable flank mounting type. Its input capacitance (Ciss) is 10450 pF at 50V, and gate charge (Qg) is 159 nC at 10V. The device is Pb-Free and Halogen-Free, complying with RoHS3 standards. Its thermal resistance from junction-to-case is 0.56°C/W, and junction-to-ambient is 38°C/W.

NTMTSC4D2N10GTXG Quick Information

Product Type: MOSFET
Series: NTMTSC4D2N10GTXG
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTMTSC4D2N10GTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMTSC4D2N10GTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMTSC4D2N10GTXG Features

  • 100V Drain-to-Source Voltage (Vdss).
  • Low 4.2mOhm Rds(on) at 10V Vgs.
  • High 178A continuous drain current.
  • Compact 8-PowerTDFN package.
  • Wide -55°C to 175°C operating temperature.

NTMTSC4D2N10GTXG Applications

  • Suitable for 48V hot swap systems.
  • Ideal for load switch applications.
  • Used in soft-start circuits.
  • Applicable for e-fuse designs.

NTMTSC4D2N10GTXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMTSC4D2N10GTXG?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the typical on-state resistance (Rds(on))?

The maximum on-state resistance is 4.2mOhm at a drain current of 88A and gate-source voltage of 10V.

What is the continuous drain current rating?

The continuous drain current is 178A at 25°C case temperature and 21A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTMTSC4D2N10GTXG available in?

It is available in an 8-PowerTDFN package with surface mount, wettable flank mounting.

Is the NTMTSC4D2N10GTXG RoHS compliant?

Yes, the device is RoHS3 compliant.

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