NTMTSC1D6N10MCTXG The On Semiconductor NTMTSC1D6N10MCTXG is an N-Channel MOSFET designed for power applications. It offers a 100V drain-to-source voltage and a continuous drain current of up to 267A.
Mfr Part #:

NTMTSC1D6N10MCTXG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMTSC1D6N10MCTXG is an N-Channel MOSFET designed for power applications. It offers a 100V drain-to-source voltage and a continuous drain current of up to 267A.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.99

NTMTSC1D6N10MCTXG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NTMTSC1D6N10MCTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

NTMTSC1D6N10MCTXG Description

Short technical summary and product information.

The NTMTSC1D6N10MCTXG from On Semiconductor is a high-performance N-Channel MOSFET. It is designed with a small footprint, measuring 8x8 mm, making it suitable for compact designs. This MOSFET features a low Rds(on) of 1.7mOhm at 90A and 10V, which helps minimize conduction losses. It also boasts low QG and capacitance to reduce driver losses.

 

Key electrical specifications include a drain-to-source voltage (Vds) of 100V and a gate-to-source voltage (Vgs) of ±20V. The continuous drain current (Id) is rated at 35A for ambient conditions and 267A for case conditions. The maximum power dissipation is 5.1W at ambient temperature and 291W at case temperature.

 

This device operates within a wide temperature range of -55°C to 175°C. It is housed in an 8-PowerTDFN package, suitable for surface mounting. The NTMTSC1D6N10MCTXG is Pb-Free and RoHS Compliant.

NTMTSC1D6N10MCTXG Quick Information

Product Type: MOSFET
Series: NTMTSC1D6N10MCTXG
Canonical Name: N-Channel MOSFET
Subcategory: Single MOSFETs

NTMTSC1D6N10MCTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMTSC1D6N10MCTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMTSC1D6N10MCTXG Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Low Rds(on) of 1.7mOhm at 90A, 10V.
  • High continuous drain current of 267A (Tc).
  • Compact 8-PowerTDFN surface mount package.
  • Wide operating temperature range of -55°C to 175°C.

NTMTSC1D6N10MCTXG Applications

  • Suitable for compact power designs.
  • Minimizes conduction losses in circuits.
  • Reduces driver losses in power systems.
  • Ideal for high-current applications.

NTMTSC1D6N10MCTXG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTMTSC1D6N10MCTXG?

The drain-to-source voltage (Vds) is 100V.

What is the maximum continuous drain current for the NTMTSC1D6N10MCTXG?

The maximum continuous drain current is 267A when measured at the case temperature.

What is the Rds On for the NTMTSC1D6N10MCTXG?

The Rds On is a maximum of 1.7mOhm when tested at 90A and 10V.

What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the NTMTSC1D6N10MCTXG in?

It is in an 8-PowerTDFN package.

Is the NTMTSC1D6N10MCTXG RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The MSL is 1 Unlimited.

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