NTMTSC002N10MCTXG The On Semiconductor NTMTSC002N10MCTXG is an N-Channel MOSFET with a 100V drain-to-source voltage. It offers a low on-resistance of 2mOhm at 90A, 10V.
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NTMTSC002N10MCTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMTSC002N10MCTXG is an N-Channel MOSFET with a 100V drain-to-source voltage. It offers a low on-resistance of 2mOhm at 90A, 10V.
✓ Total Stock: 5 pcs
$ Price Range: $0.99

NTMTSC002N10MCTXG Available from 1 distributor

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NTMTSC002N10MCTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMTSC002N10MCTXG Description

Short technical summary and product information.

This N-Channel MOSFET from On Semiconductor, part number NTMTSC002N10MCTXG, is designed for power applications. It features a high continuous drain current capability of 236A at Tc=25°C and 45A at Ta=25°C, with a maximum drain-to-source voltage of 100V.

 

The MOSFET boasts a low on-resistance of 2mOhm at 90A and 10V, minimizing conduction losses. It also has a low gate charge (Qg) of 89nC at 10V, reducing driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-TDFNW (8.3x8.4 mm) surface-mount package, it is suitable for compact designs. The wettable flank mounting type ensures good solder joint reliability. This MOSFET is Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage of 4V at 520µA and an input capacitance of 6305pF at 50V. Thermal resistance values are 0.6°C/W junction-to-case (bottom) and 38°C/W junction-to-ambient.

NTMTSC002N10MCTXG Quick Information

Product Type: MOSFET
Series: NTMTSC002N10MCTXG
Canonical Name: N-Channel MOSFET
Subcategory: Single

NTMTSC002N10MCTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMTSC002N10MCTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMTSC002N10MCTXG Features

  • 100V drain-to-source voltage rating.
  • Low 2mOhm on-resistance at 90A.
  • High 236A continuous drain current.
  • Compact 8-TDFNW surface mount package.
  • Wide -55°C to 175°C operating temperature.

NTMTSC002N10MCTXG Applications

  • Suitable for high-power switching.
  • Efficient conduction loss minimization.
  • Compact design applications.
  • Power management circuits.
  • Automotive power systems.

NTMTSC002N10MCTXG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTMTSC002N10MCTXG MOSFET?

The drain-to-source voltage (Vds) is 100V.

What is the maximum continuous drain current of the NTMTSC002N10MCTXG MOSFET?

The maximum continuous drain current is 236A when measured at the case temperature (Tc) of 25°C, and 45A when measured at the ambient temperature (Ta) of 25°C.

What is the on-resistance (Rds(on)) of the NTMTSC002N10MCTXG MOSFET?

The on-resistance is a maximum of 2mOhm when tested at 90A drain current and 10V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMTSC002N10MCTXG MOSFET supplied in?

It is supplied in an 8-TDFNW package, specifically the 8-PowerTDFN variant, designed for surface mounting.

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