NTMTS1D6N10MCTXG The ON Semiconductor NTMTS1D6N10MCTXG is a single N-Channel Power MOSFET. It features a 100V drain-to-source voltage and low on-resistance.
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NTMTS1D6N10MCTXG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMTS1D6N10MCTXG is a single N-Channel Power MOSFET. It features a 100V drain-to-source voltage and low on-resistance.
✓ Total Stock: 14,684 pcs
$ Price Range: $0.99

NTMTS1D6N10MCTXG Available from 1 distributor

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NTMTS1D6N10MCTXG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMTS1D6N10MCTXG Description

Short technical summary and product information.

The ON Semiconductor NTMTS1D6N10MCTXG is a single N-Channel Power MOSFET designed for efficient power management. It offers a drain-to-source voltage of 100V and a maximum on-resistance of 1.7mOhm at 90A and 10V gate drive.

 

This MOSFET has a continuous drain current rating of 273A at 25°C case temperature and 36A at 25°C ambient temperature. Its power dissipation is rated at 291W (Tc) and 5W (Ta) at 25°C. The device operates within a junction temperature range of -55°C to 175°C.

 

Packaged in an 8-DFN (8.3x8.4) surface mount package, the NTMTS1D6N10MCTXG is suitable for compact designs. It features low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. The device is Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage of 4V (max) at 650µA and input capacitance of 7630pF at 50V. The avalanche energy is rated at 1301mJ.

NTMTS1D6N10MCTXG Quick Information

Product Type: MOSFET
Series: NTMTS1D6N10MCTXG
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel

NTMTS1D6N10MCTXG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTMTS1D6N10MCTXG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMTS1D6N10MCTXG Features

  • 100V drain-to-source voltage rating.
  • 1.7mOhm maximum on-resistance.
  • 273A maximum continuous drain current.
  • Surface mount 8-DFN package.
  • Pb-free and RoHS compliant.

NTMTS1D6N10MCTXG Applications

  • Suitable for compact power designs.
  • Minimizes conduction losses effectively.
  • Reduces driver losses significantly.
  • Designed for efficient power management.

NTMTS1D6N10MCTXG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 100 V.

What is the maximum on-resistance?

The maximum on-resistance is 1.7mOhm at 90A and 10V.

What is the continuous drain current?

The continuous drain current is 273A at 25°C case temperature and 36A at 25°C ambient temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is this MOSFET in?

This MOSFET is in an 8-DFN package.

Is this device RoHS compliant?

Yes, this device is RoHS3 compliant.

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