| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMTS1D5N08MC is an N-Channel MOSFET with a drain-to-source voltage rating of 80V. It offers a low on-resistance of 1.56mOhm at 10V Vgs and 80A Id, minimizing conduction losses. The device can handle a continuous drain current of up to 287A at 25°C case temperature and 33A at 25°C ambient temperature.
This MOSFET is designed for efficient power management, featuring low gate charge (Qg) of 140nC at 10V Vgs and input capacitance (Ciss) of 10400pF at 40V Vds. It operates within a temperature range of -55°C to 150°C.
The NTMTS1D5N08MC is housed in an 8-PowerTDFN package, measuring 8.3x8.4mm, suitable for compact designs. It is surface-mounted and designed for applications requiring efficient power switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80 V.
The maximum on-resistance is 1.56mOhm at 80A drain current and 10V gate-source voltage.
The continuous drain current is 287A at 25°C case temperature and 33A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The NTMTS1D5N08MC is supplied in an 8-PowerTDFN package.