| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMTS1D5N08H from On Semiconductor is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 80V and a low maximum on-resistance of 1.5mOhm at 10V gate-to-source voltage and 90A drain current. The device supports a continuous drain current of up to 255A at a case temperature of 25°C and 36A at an ambient temperature of 25°C.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 490µA and a gate charge of 125nC maximum at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
Packaged in an 8-PowerTDFN (8.3x8.4mm) surface mount package, the NTMTS1D5N08H is suitable for compact designs. It is specified as Pb-Free and RoHS Compliant. The low RDS(on) and low QG contribute to minimizing conduction and driver losses, respectively, making it an efficient choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80 V.
The maximum on-resistance is 1.5mOhm at 90A and 10V.
The continuous drain current is 255A at 25°C (Tc) and 36A at 25°C (Ta).
The operating junction temperature range is -55°C to 150°C.
It is in an 8-PowerTDFN package.
Yes, it is RoHS3 Compliant.