| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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128 pcs
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128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMTS0D7N06CTXG is a power MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage of 60V and a continuous drain current of 60.5A at 25°C, with a pulsed drain current up to 900A. The device has a low on-resistance of 0.72 milliohms at 50A and 10V, making it suitable for high-efficiency power switching applications. Its thermal characteristics include a maximum power dissipation of 294.6W at 25°C and a junction-to-ambient thermal resistance of 30°C/W. The device operates over a temperature range from -55°C to +175°C and is packaged for surface mounting. It is designed for use in power supplies, motor controls, and other high-current electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 60V.
The maximum continuous drain current is 60.5A.
The maximum power dissipation is 294.6W.
It operates from -55°C to +175°C.