| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,248 pcs
|
1248 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMTS0D6N04CTXG from On Semiconductor is a high-performance N-Channel Power MOSFET. It is designed to handle significant current with a continuous drain current rating of 533A at a case temperature.
This MOSFET offers a low on-resistance of 0.48mOhm at 50A and 10V gate drive, minimizing power loss and improving efficiency. It operates with a drain-to-source voltage of up to 40V and features a gate charge of 187nC at 10V.
Packaged in an 8-PowerTDFN surface mount package, the NTMTS0D6N04CTXG is suitable for applications requiring robust power handling. The operating temperature range is -55°C to 175°C (TJ), making it suitable for demanding environments.
Key electrical characteristics include a gate threshold voltage of 4V at 250µA and a maximum gate-source voltage of ±20V. The input capacitance is rated at 11800pF at 20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 533A.
The on-resistance is 0.48mOhm at 50A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
It is in an 8-PowerTDFN package for surface mounting.