| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor NTMT190N65S3HF is an N-Channel SUPERFET III FRFET MOSFET designed for high efficiency and miniaturization in power systems. It utilizes charge balance technology for low on-resistance and reduced gate charge.
Key electrical specifications include a 650V drain-source voltage (Vdss) and a maximum continuous drain current of 20A at 25°C. The on-resistance (Rds On) is rated at a maximum of 190mOhm at 10A and 10V gate drive, with a typical gate charge (Qg) of 34nC. The input capacitance (Ciss) is 1610pF at 400V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 162W at 25°C. It is suitable for applications such as telecom/server power supplies, industrial power supplies, UPS, solar, lighting, chargers, and adapters.
The device is housed in a 4-PowerTSFN (8x8mm) surface mount package, offering excellent switching performance due to low parasitic source inductance and separated power and drive sources. It is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The typical gate charge (Qg) is 34 nC at 10V.
The maximum on-resistance (Rds On) is 190 mOhm at 10A drain current and 10V gate-source voltage.
It is available in a 4-PowerTSFN surface mount package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the NTMT190N65S3HF is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.