NTMT190N65S3H The ON Semiconductor NTMT190N65S3H is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 16A continuous drain current.
Mfr Part #:

NTMT190N65S3H

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMT190N65S3H is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 16A continuous drain current.
✓ Total Stock: 8,378 pcs
$ Price Range: $0.99

NTMT190N65S3H Available from 2 distributors

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✓ Non-Authorised
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7,378 pcs
7378 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NTMT190N65S3H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMT190N65S3H Description

Short technical summary and product information.

The ON Semiconductor NTMT190N65S3H is a high-performance N-Channel MOSFET belonging to the SUPERFET III series. It is designed for demanding power conversion and switching applications.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 16A at a case temperature. The on-resistance (Rds On) is specified at a maximum of 190mOhm at 8A and 10V gate-source voltage. The gate charge (Qg) is 31nC maximum at 10V, and the gate source threshold voltage (Vgs(th)) is 4V maximum at 1.4mA.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It has an input capacitance (Ciss) of 1600pF maximum at 400V and a maximum gate source voltage of ±30V. The maximum power dissipation is 129W at the case temperature.

 

The NTMT190N65S3H is available in a surface mount package, specifically a 4-TDFN (8x8) with a 4-PowerTSFN designation. This mounting type is suitable for automated assembly processes.

NTMT190N65S3H Quick Information

Product Type: MOSFET
Series: SUPERFET III
Canonical Name: NTMT190N65S3H N-Channel Power MOSFET
Subcategory: Single

NTMT190N65S3H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMT190N65S3H Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMT190N65S3H Features

  • 650V drain-source voltage rating.
  • 16A continuous drain current capability.
  • Low 190mOhm on-resistance.
  • Surface mount 4-TDFN package.
  • Operates up to 150°C.

NTMT190N65S3H Applications

  • Suitable for power conversion circuits.
  • Used in high-efficiency switching applications.
  • Ideal for industrial power supplies.
  • Applicable in automotive systems.

NTMT190N65S3H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTMT190N65S3H?

The maximum drain-source voltage is 650V.

What is the continuous drain current of the NTMT190N65S3H?

The continuous drain current is 16A.

What is the on-resistance of the NTMT190N65S3H?

The on-resistance is a maximum of 190mOhm at 8A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the NTMT190N65S3H supplied in?

It is supplied in a 4-TDFN (8x8) package for surface mounting.

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